MOCVD systems respond to demand for higher LED productivity and yield

Feb. 18, 2007
Manufacturers of equipment used to grow LED layer structures have introduced new systems capable of depositing even more material in a single run, in response to customer demand for higher throughput and more cost-effective production.
The new MOCVD systems introduced by Aixtron (Aachen, Germany) and Veeco (Somerset, NJ, USA) can grow gallium nitride-based LED layer structures on as many as 42 or 45 two-inch wafers, respectively, while each offering different attributes.

LED chips are composed of multiple layers of different semiconducting materials, which are deposited onto circular wafers inside a metal-organic chemical vapor deposition (MOCVD) system. This process, known as epitaxy, is critical for determining LED performance characteristics and therefore influences binning of white LEDs.

Rainer Beccard, Aixtron's director of marketing, says that the first AIX 2800G4 Planetary Reactors from Aixtron are now operational at customer sites in Asia, and that a double-digit number of machines have been sold. With a capacity of 42 two-inch wafers, and based on the modular IC (integrated concept) platform, the system has almost double the capacity of the company's previous-largest machine.


This article was published in the February 2007 issue of LEDs Magazine.

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