Date Announced: 16 Oct 2007 DURHAM, N.C. — Cree, Inc. (Nasdaq: CREE) today announced commercial release of its Zero Micropipe (ZMPTM) 100-mm, n-type silicon carbide (SiC) substrates. With this achievement, Cree reinforces its position as the world’s leading manufacturer of SiC-based semiconductor materials.SiC can be used to produce a broad range of power, light and communications components, including power-switching devices, light-emitting diodes (LEDs) and RF power transistors for wireless communications.Micropipes, which are crystalline defects in SiC, have been present in nearly all SiC wafers manufactured and sold by commercial substrate vendors until recently. Micropipes cannot only decrease the number of usable electronic devices produced per wafer but can also negatively affect performance parameters of each device produced. Through previous research and development efforts at Cree, partially funded by the U.S. Army and DARPA, the density of these defects has been dramatically reduced.“The transition to production of Cree’s 100-mm ZMP substrate technology is an important step to the wide-scale industry adoption of SiC as the material of choice for high-power switching components,” stated Cengiz Balkas, Ph.D., Cree vice president and general manager for materials. “The integration of this technology across other Cree product lines is expected to accelerate the adoption of SiC as a high-volume, production-ready material platform.”
Contact
Deb Lovig, Marketing Communications Manager, Cree, Inc. (919) 287-7505
E-mail:[email protected]
Web Site:www.cree.com
