China’s Sanan OptoElectronics increases HB-LED epiwafer capacity with AIXTRON MOCVD tools

July 2, 2010
Date Announced: 02 Jul 2010 Aachen/Germany, July 1, 2010 – AIXTRON AG today announced a multiple tool order from Sanan OptoElectronics Co. Ltd., headquartered in Xiamen, China. The Sanan order for multiple CRIUS® 31x2 inch tools was placed at the end of 2009. The local AIXTRON support team has successfully commissioned the new HB GaN LED growth reactors at Sanan’s new purpose-built facility in Tianjin in the first two quarters of 2010.Mr. Simon Lin, CEO of Sanan OptoElectronics comments: "We have begun a major expansion with our new facility in Tianjin and were looking for world-class MOCVD tools in order to increase our manufacturing capacity of high brightness light emitting diodes (HBLEDs). The reputation for excellent uniformity and high throughput from the AIXTRON CRIUS® MOCVD tool convinced us that these were the ideal choice for Sanan. Working closely with AIXTRON’s support team we will be able to quickly ramp up HB GaN LED epiwafer production in response to the strong market demand."Sanan Optoelectronics Co. Ltd. is one of the largest manufacturer of full color LEDs in China. They are engaged in the design, development, manufacture and distribution of full color ultra high brightness (UHB) LEDs, epitaxial wafers, photo-diode detectors and compound solar cells.

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