Date Announced: 12 Oct 2010 Aachen/Germany, October 12, 2010 – AIXTRON AG today announced that in the second quarter of 2010, Formosa Epitaxy Inc. (FOREPI), placed an order for a 56x2-inch AIX G5 HT MOCVD reactor which will be used for ultra-high brightness (UHB) GaN-based LEDs. Planned to be shipped in the fourth quarter of 2010 it will join FOREPI’s multiple high throughput Planetary Reactor® systems at the company’s state-of-the-art facility in Lung-Tan, Taoyuan, Taiwan. FOREPI President Dr. Fen-Ren Chien comments: “This is our company’s first AIX G5 HT system, allowing us to smoothly transfer our process recipes to a new reactor. Once this is proven we can look forward to the purchase of more systems for production. The reason why the AIXTRON system was chosen comes down to the all round excellent performance of our existing systems like the G4 and CRIUS®. Hence we have a strong interest in acquiring AIXTRON´s recently launched products – such as the G5 and the CRIUS® II. Following successful recipe transfer, FOREPI will exercise all the advantages that we can get from the G5 system, having already demonstrated high quality GaN deposition at very high growth rates and high pressure above 600 mbar resulting in superior GaN/InGaN uniformities.“ The G5 provides advanced production solutions for the manufacturer, exactly meeting the demanding market requirements on performance and productivity. Special features include a new high growth rate injector, a graphite ceiling, as well as the EqiSat, enabling identical surface temperatures on all satellites/wafers, thus further improving process yield. For over ten years, FOREPI has focused on pure-play manufacture of high power InGaN LED wafers and chips and has been a long-time user of AIXTRON systems for advanced high performance HB-LED product manufacture. It set its sights on meeting the needs of high end applications such as LCD TV backlighting and today’s current strong demand proved the correctness of that strategy.
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