Epitech boosts GaN LED wafer output with Thomas Swan machine

July 5, 2006
Date Announced: 05 Jul 2006 AIXTRON AG is pleased to announce the order for a new Thomas Swan CRIUS MOCVD reactor by Epitech Technology Corporation, of Tainan, Taiwan.The system with a wafer capacity of 30 x 2-inch wafers will be used for the mass production of gallium nitride (GaN) based ultra-high brightness (UHB) LEDs. AIXTRON expects shipment to be in the third quarter of 2006. It will be installed in Epitech's state-of-the-art facility in the Tainan Science-based Industrial Park in the south of Taiwan."For many years, we have had a very satisfactory working relationship with AIXTRON which has met all our requirements for production of LED epiwafers," said Semi Wang, President of Epitech Technology Corporation. "In our new plans we require a versatile, high throughput machine to give us increased capacity needed to meet growing customer demand. This is why we have selected the new CRIUS MOCVD reactor.”Bernd Schulte, Executive Vice President and COO of AIXTRON adds: "It is very encouraging that Epitech has chosen Thomas Swan’s CRIUS tool. The reactor has the headroom required for future requirements in not only capacity but also growth flexibility. This contract reaffirms the satisfaction of the most demanding customers and the leadership of our technology and services."Amongst the latest offerings in the Thomas Swan range of MOCVD tools, the CRIUS 30x2-inch is one of the highest capacity models available in the marketplace. Robust and extremely versatile, the customer can choose the optimum configuration by wafer size, in this case 30x2-inch sapphire or silicon carbide substrates per run. The CRIUS design is based on AIXTRON’s new ‘Integrated Concept’ (IC). The ‘Integrated Concept’ optimizes uptime and reduces cost thanks to a re-design of many components of the reactor system as well as the reactor cell itself. Key features include a compact footprint, improved maintenance, easier operation and handling, improved reliability and reproducibility compared to present reactors. For further information on AIXTRON AG (FSE: AIX, ISIN DE0005066203; NASDAQ: AIXG) please consult our website at: www.aixtron.com.

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Web Site:http://www.aixtron.com