Highlink Technology gains GaN capacity with 2 more Aixtron tools

Jun 21st, 2006
Date Announced: 21 Jun 2006

Aachen, Germany, June 20, 2006 - Highlink Technology Corporation, a developer and manufacturer of gallium nitride (GaN) based HB LEDs for advanced lighting applications, has ordered two AIX 2800G4HT 42x2-inch Planetary Reactor® in the first quarter of 2006.

The new machines, which are the latest and largest capacity of offer by AIXTRON, will be used for high-volume production of epitaxial wafer products. AIXTRON expects shipment of the systems in the third quarter of 2006.

The Taiwan-based company was established in 2000 and is positioned to meet world-wide demand for high quality LED wafers and chips. Besides the increased wafer capacity, the new MOCVD systems feature optimized thermal conditions and an improved gas inlet, both improving significantly yield and uniformity.

Mr. Gary Yu, President of Highlink commented: "We have been very satisfied and impressed with our AIX 2600G3 HT Planetary Reactor®. However, the build-up in customer demand means that we now require a major increase in production capacity while retaining the superior properties and efficiencies of this range of production tools."

Dr. Christian Geng, General Manager of AIXTRON Taiwan added: "We are very pleased that Highlink Technology Corporation chose to order more AIXTRON systems. These will soon translate into technology and capacity improvements for GaN LED production thanks to the superior capabilities of the high capacity AIX 2800G4 HT system."

Contact
AIXTRON AG Aachen, Germany Phone: +49 241 8909 474

E-mail:info@aixtron.com

Web Site:http://www.aixtron.com

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