SiLENSe 3.60 for modeling nitride semiconductors has been released

Content Dam Leds En Ugc 2008 07 Silense 3 60 For Modeling Nitride Semiconductors Has Been Released Leftcolumn Article Thumbnailimage File
16606 0 thumb Date Announced: 30 Jul 2008

The software tool “Simulator of Light Emitters based on Nitride
Semiconductors” (SiLENSe) is aimed at modeling electrical and optical
processes in LED and laser diode heterostructures based on wurtzite

SiLENSe is a part of the SimuLED software package designed for analysis and optimization of these devices. New version 3.60 includes an original model of IQE increase due to carrier localization in the In-rich regions formed by composition fluctuations in InGaN active layers.

The carrier localization prevents them from non-radiative
recombination at threading dislocations. The rest free carriers can
easily move to the dislocation cores, giving rise to the non-radiative
recombination. The model predicts the fraction of the localized carriers and its dependence on the carrier concentration in InGaN quantum wells.

Mark Ramm STR Group, St. Petersburg Tel: +7 (812) 320-43-90 Fax: +7 (812) 326-61-94


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