Epicrystal-Epistar to accelerate capacity expansion with Aixtron UHB GaN LED systems

Feb. 10, 2011
Date Announced: 10 Feb 2011 Aachen/Germany – AIXTRON SE today announced a new order for MOCVD reactors from an Epistar joint venture, Epicrystal Corporation (Changzhou), Ltd. in China. The company, formed as a new joint venture between Epistar and Epistar’s customers, is engaged in manufacture and distribution of LED-based products. The order is made up of five AIX 2800G4 HT MOCVD systems. Following delivery in the second quarter of 2011, the systems will be used for production of ultra-high brightness (UHB) GaN-based LEDs. The new reactors will be commissioned by the local AIXTRON support team working with a key technical team from Epistar at a new purpose-built facility in China.President Easy Hwang of Epicrystal Corporation (Changzhou) Ltd., comments, “While we are a new company registered in China and in the first phase of our capacity expansion we rely on the excellent record with respect to device performance and yield obtainable from AIXTRON systems through Epistar. The proven process compatibility and transferability from one Planetary MOCVD system to another will enable us to complete the ramp up of EpiCrystal’s production capacities in a very short time. The AIXTRON MOCVD systems clearly demonstrate its competitiveness in terms of Cost of Ownership and productivity. I'm confident that this partnership will help provide the tools we need as the characteristics of the AIX 2800G4 HT will ensure that our productivity goals will be met.“

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