European experts discuss advances in semiconductor technology at 15th EWMOVPE event

Date Announced: 03 Jun 2013

15th EWMOVPE-Workshop: Fresh impetus from science for green technologies of the future

The long-standing European Workshop on Metalorganic Vapor Phase Epitaxy (EWMOVPE*) returns to Aachen after 26 years: From June 2nd - 5th 2013 physicists, chemists, material science specialists and engineers from research and industry discuss new possibilities in semiconductor technology in the Europaplatz Technology Centre (TZA). For more than three decades the scientific community from the
Aachen region has made a significant contribution to the worldwide success of this technology. Hosts of the workshop are the research alliance JARA (Jülich Aachen Research Alliance), the Peter Grünberg Institute 9 (Forschungszentrum Jülich) and the research group on GaN Device Technology (GaN-BET) at RWTH Aachen University. From an industrial aspect, the system manufacturer AIXTRON supports the event. The company was established with this technology in 1983 as a spin-off of the RWTH Aachen. By developing and manufacturing MOVPE systems it evolved into the global market leader in this field.

The aim of the four-day convention is to improve the understanding of technology and to develop approaches for novel material compounds with customized physical characteristics, particularly with an eye to energy-saving "green" technologies.

"Without the development of the MOVPE-technology there would not have been significant progress in nano- and optoeletronics," says Dr. Hilde Hardtdegen of the Forschungszentrum Jülich. "The development of optical data transfer, LEDs for lighting engineering, as well as energy-efficient electronic and optoelectronic devices, is based on this process." The graduated chemist is group leader for vapor phase epitaxy at Jülich and a member of the program committee of EWMOVPE since 1998. Her father, professor Pieter Balk, had already intensively further developed the vapor phase epitaxy as the chair for semiconductor technology at RWTH in the seventies and perfected it to industrial maturity. Not only did he develop the format of a European platform for exchange between science and industry, but he also organized the first European EWMOVPE-Workshop in Aachen in 1987.

The AIXTRON founders Dr. Meino Heyen and Dr. Holger Jürgensen - the latter being honorary chairman of the AIXTRON supervisory board - continued the success story of the MOVPE system now used globally. Both graduated from the Institute for Semiconductors at the RWTH with Professor Balk and developed their first MOVPE research system there.

"I am happy to continue the long-standing successful tradition of semiconductor epitaxy as a basis for new devices at the RWTH Aachen," declares professor Andrei Vescan, head of the teaching and research division GaN device technology. "To this day the Aachen region is active within the Jülich-Aachen Research Alliance with a variety of research activities in this area and is dedicated to fundamental issues of new materials deposition through the development of new deposition processes all the way to concepts for new devices for energy-efficient lighting and power electronics. The next step will be to advance devices and applications based on gallium nitride-on-silicon towards commercial products."

"We need inspiration from science," says Dr. Frank Schulte, vice president Europe at AIXTRON. "The contributions this year are at a very high scientific level and can also withstand international comparison."

Approaches such as the further development of the so-called nano-columns or GaN-based LEDs on large-scale silicon wafers have the potential to skip technological steps and achieve commercial application within a few years.

"The EWMOVPE-Workshop is an excellent example of the successful cooperation between science and industry," says Prof. Dr. Sebastian M. Schmidt, management board member of the Forschungszentrum Jülich. "The cooperation between RWTH Aachen and the Forschungszentrum Jülich produces verifiable scientific peak results that are experienced in the industrial sector as an impetus for innovation.”

The vapor phase epitaxy (MOVPE) - which creates crystalline layers of a very high quality, is today the most important process in the manufacture of optoelectronic and electronic devices consisting of complex semiconductor-heterostructures. This process is the basis for the production of modern semiconductor light sources, such as light-emitting diodes and lasers, of high frequency transistors for mobile telephones, but also of high performance solar cells or devices for voltagetransformers or power supply units.

*EWMOVPE = European Workshop on Metalorganic Vapor Phase Epitaxy

About JARA
The Jülich Aachen Research Alliance, in short JARA, is a unique cooperation model in Germany between the RWTH Aachen and the Forschungszentrum Jülich. It overcomes the insularity of university and non-university research and teaching to deal with complex problems using unified research competence and capacity. The RWTH Aachen and the Forschungszentrum Jülich link at JARA selective research fields in which they have complementary expertise. They create a top class scientific environment under the motto "concentrate competencies, research together, create the future".
www.jara.org

Teaching and research field GaN device technology (GaN-BET)
The research activities of the device technology focus on the areas of group III nitrides as well as organic semiconductors, their technology and components. These encompass the research and development of applied structures and elements for electronic and optoelectronic devices; fundamental research and topics from physics are also processed, including numerical simulations.
www.gan.rwth-aachen.de

Peter-Grünberg-Institute Semiconductor Nano-Electronics (PGI-9)
The institute investigates fundamental problems in semiconductor physics and in semiconductor materials. In the device development alternative concepts and property limits are explored, e.g., the maximum transistor frequency and the minimum transistor cross section. The epitaxy of SiGe, classical III/V compounds and of GaN is a broad activity.
www.fz-juelich.de/pgi/pgi-9/DE/Home/home_node.html

About AIXTRON
AIXTRON SE is a leading provider of deposition equipment to the semiconductor industry. The company's technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and optoelectronic applications (photonics) based on compound, silicon, and organic semiconductor materials, as well as carbon nanostructures, graphs and further nano-materials. Such components are used in displays, signaling and lighting, fiber optic communication systems, wireless and mobile telephony applications, optical and electronic storage devices, computing, as well as a range of other leading-edge technologies.

For more information about AIXTRON (FWB: AIXA, ISIN DE000A0WMPJ6; NASDAQ: AIXG, ISIN US0096061041) please visit www.aixtron.com.

Contact
AIXTRON SE marketing communications +49-241-8909-756

E-mail:marcom@aixtron.com

Web Site:www.aixtron.com

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