Seren Photonics Ltd is pleased to announce the launch of its next generation of semi-polar gallium nitride (GaN) on sapphire templates for LED wafer processing.
This latest generation of 11-22 GaN templates continues to be based on Seren’s patented approach developed by Professor Tao Wang’s team at the University of Sheffield.
The improved performance comes about through a manufacturing upgrade that not only improves crystal quality, but also enhances manufacturing yield.
This approach has already completed qualification for 2” diameter product and as part of its development activity, Seren has now adapted the enhanced approach to the development of 4” and 6” templates. “With demand for 4” and 6” accounting for over 75% of the sapphire market for LEDs, the need to provide customers with industry standard 4” diameter wafers along with the option to upgrade to 6” makes total commercial sense” said Bedwyr Humphreys Chief Development Officer at Seren Photonics. 4” templates for customer sampling are expected during Q3 2015, with 6” planned to come online during H1 2016.
Experts in the semi-polar GaN field will know that semi-polar GaN displays anisotropic behaviour under x-ray diffraction. What this means is that, unlike c-plane GaN, semi-polar GaN crystal quality is dependent on the direction along the wafer that the measurement is taken. This latest development has overcome this issue yielding a semi-polar GaN layer with isotropic crystal quality. This not only enhances the optical isotropy of the material but also ensures electrical properties such as mobility are also isotropic.
This latest generation is now available for sampling in 2” diameter or custom sizes. At less than 5um thick, the GaN layer for these semi-polar templates is the thinnest available on the market today, ensuring minimal wafer bow with maximum defect blocking.
Contact:Seren Photonics Ltd
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