High-efficiency deep UV LEDs bring together Sensor Electronic Technology and Kyma Technologies

Sep 8th, 2010
Date Announced: 08 Sep 2010

Columbia, SC, USA – Sensor Electronic Technology, Inc. (SETI) announced that it has entered a Joint Development Agreement with Kyma Technologies, Inc. of Raleigh, NC to develop low defect AlGaN substrates and high performance optoelectronic and electronic devices based on these substrates.

Under this agreement, SETI will center its device development efforts on next generation high efficiency Deep UV LEDs on these novel substrates as it grows its markets in high power applications such as water disinfection.

SETI is the world’s only commercial manufacturer of Deep UV LEDs and LED lamps. With a product portfolio from 240nm through 400nm SETI serves a wide range of markets including sensing and instrumentation and with recent announcements of high power single chip LEDs exceeding 30 mW and with high power lamps commercially available, SETI has recently been experiencing rapid growth in the disinfection/sterilization market.

“The LED performance improvements that will be enabled by developments under this Agreement will help us grow the foundation we have already built in the disinfection market” said President and CEO of SETI, Remis Gaska, “and will maintain our position as leaders in Deep UV LED products”.

Recently, SETI has successfully completed a Small Business Innovation Research (SBIR) Phase I program by the National Science Foundation to develop a prototype of a commercially viable all-LED based portable water disinfection system.

Kyma Technologies, Inc. (Kyma) is a leading supplier of crystalline III-nitride semiconductor materials including GaN and AlN. Each semiconductor device layer stack has a preferred substrate composition. AlN and GaN substrates are preferred for device layer stacks which are AlN-rich and GaN-rich, respectively. For device layer stacks which have an intermediate preferred lattice constant, such as UV LEDs and certain next generation high frequency and high power electronics, AlGaN substrates are preferred.

“We appreciate the opportunity to work with SETI to develop a low defect AlGaN substrate product line, which should benefit a range of advanced nitride semiconductor device technologies,” stated Keith Evans, President and CEO of Kyma Technologies.

SETI and Kyma will both be presenting at the International Workshop on Nitride Semiconductors (IWN 2010) in Tampa, Florida on September 19th to 24th.

Contact
SETI 803-647-9757 Kyma info@kymatech.com 919-789-8880

E-mail:info@s-et.com

Web Site:www.s-et.com

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