The process flow for fabricating metal bonding (MB) LED chips. (a) An ohmic contact metal and a high-reflectivity metal layer are deposited onto an LED epiwafer, and a solder layer is deposited onto a substrate (silicon, metal, SiC etc). (b) The mirror metal and solder layers are bonded together at a low temperature. (c) The GaAs substrate is removed by lapping and chemical etching. (d) Top and bottom ohmic contact metals are deposited and annealed. Finally, the MB AlGaInP LED wafers are sawed into individual discrete chips.