LOGIN  |  SUBSCRIBE  |  ADVERTISE  |  CONTACT US
LEDs MAGAZINEILLUMINATION IN FOCUSSTRATEGIES IN LIGHTTHE LED SHOWSTRATEGIES UNLIMITED
LEDs Magazine
HOMEARTICLESNEWSPRODUCTSBUYERS GUIDEEVENTSMAGAZINENEWSLETTERSJOBSTOPIC CENTERRESOURCE CENTER
INDUSTRY NEWS
Return to article

Dimensions of Cree's InGaN-on-SiC LED chips relative to the standard GaN device. RazerThin (RT) devices are only 95 microns thick. MegaBright (MB) chips are shaped to improve light extraction. XBright (XB) chips are mounted junction side down for improved heat extraction. XThin (XT) devices are also shaped and much thinner, for backlighting applications. Credit: Cree

Copyright © 2007-2012 PennWell Corporation, Tulsa, OK. All Rights Reserved. LEDs Magazine is part of PennWell's Technology Group, which also includes:
Designed by Kestrel Web Services