SiC Wafer, High Speed Polishing Method. Our new high speed polishing method creates surface flatness less than Rms 0.1nm with poly type and polarity type. Polishing time is approximately 200 minutes for total process compared to 60 hours for other processes. Short time process, three step polishing for damage free and surface quality for Epitaxy growth for 2", 3", 4" and 6" wafers. Please contact Seikoh Giken for your wafer polishing needs.